TY - JOUR T1 - Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate JF - Applied Physics Letters Y1 - 2016 A1 - Schulze, C. S. A1 - Huang, X. A1 - Prohl, C. A1 - üllert, V. A1 - Rybank, S. A1 - Maddox, S. J. A1 - March, S. D. A1 - Bank, S. R. A1 - Lee, M. L. A1 - Lenz, A. VL - 108 UR - http://scitation.aip.org/content/aip/journal/apl/108/14/10.1063/1.4945598 IS - 14 JO - Appl. Phys. Lett. ER -