Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

Publication Type:

Journal Article

Authors:

Schulze, C. S.; Huang, X.; Prohl, C.; üllert, V.; Rybank, S.; Maddox, S. J.; March, S. D.; Bank, S. R.; Lee, M. L.; Lenz, A.

Source:

Applied Physics Letters, Volume 108, Issue 14, p.143101 (2016)

URL:

http://scitation.aip.org/content/aip/journal/apl/108/14/10.1063/1.4945598